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Band-Gap Energy and Electronic d-d Transitions of NiWO4 Studied under High-Pressure Conditions

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dc.contributor.author Errandonea, Daniel es_ES
dc.contributor.author Rodriguéz, Fernando es_ES
dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Vie Giner, David es_ES
dc.contributor.author Garg, Siddhi es_ES
dc.contributor.author Nayak, Bishnupriya es_ES
dc.contributor.author Garg, Nandini es_ES
dc.contributor.author Singh, Jaspreet es_ES
dc.contributor.author Kanchana, Venkatakrishnan es_ES
dc.contributor.author Vaitheeswaran, Ganapathy es_ES
dc.date.accessioned 2024-11-20T19:10:04Z
dc.date.available 2024-11-20T19:10:04Z
dc.date.issued 2023-07-26 es_ES
dc.identifier.issn 1932-7447 es_ES
dc.identifier.uri http://hdl.handle.net/10251/212065
dc.description.abstract [EN] We report an extensivestudy of the optical and structural propertiesof NiWO4 combining experiments and density functional theorycalculations. We have obtained accurate information on the pressureeffect on the crystal structure determining the equation of stateand compressibility tensor. We have also determined the pressure dependenceof the band gap finding that it decreases under compression becauseof the contribution of Ni 3d states to the top ofthe valence band. We report on the sub-band-gap optical spectrum ofNiWO(4) showing that the five bands observed at 0.95, 1.48,1.70, 2.40, and 2.70 eV correspond to crystal-field transitions withinthe 3d (8) (t (2g) (6) e (g) (2)) configurationof Ni2+. Their assignment, which remained controversialuntil now, has been resolved mainly by their pressure shifts. In additionto the transition energies, their pressure derivatives are differentin each band, allowing a clear band assignment. To conclude, we reportresistivity and Hall-effect measurements showing that NiWO4 is a p-type semiconductor with a resistivity thatdecreases as pressure increases. es_ES
dc.description.sponsorship D.E. acknowledges the financial support from the Generalitat Valenciana under grant nos. PROMETEO CIPROM/2021/075-GREENMAT and MFA/2022/007 and Spanish Ministerio de Ciencia e Innovacion and Agencia Estatal de Investigacion (MCIN/AEI/10.13039/501100011033) and the European Union under grant nos. PID2019-106383GB-41/42 and RED2018-102612-T (MALTA Consolider-Team network). This study forms part of the Advanced Materials program and is supported by MCIN with funding from European Union Next Generation EU (PRTR-C17.I1) and by the Generalitat Valenciana. F.R. acknowledges financial support from Projects PID2021-127656NB-I00 and MALTA-Consolider Team (RED2018-102612-T) from the State Research Agency of Spain, Ministry of Science and Innovation. The authors J.S. and V.K. would like to acknowledge IIT Hyderabad for computational facility. V.K. would like to acknowledge DST-FIST (SR/FST/PSI-215/2016) for the financial support. J.S. would like to acknowledge CSIR for the fellowship. G.V. would like to acknowledge Institute of Eminence, University of Hyderabad (UoH-IoE-RC3-21-046) for funding and CMSD University of Hyderabad for providing the computational facility. We thank Dr. Velaga Srihari and Smt. Vasanthi for helping with the data acquisition at BL11 beamline at INDUS2. es_ES
dc.language Inglés es_ES
dc.publisher American Chemical Society es_ES
dc.relation.ispartof The Journal of Physical Chemistry C es_ES
dc.rights Reconocimiento (by) es_ES
dc.subject Band -gap energy es_ES
dc.subject High pressure es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Band-Gap Energy and Electronic d-d Transitions of NiWO4 Studied under High-Pressure Conditions es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1021/acs.jpcc.3c03512 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-106383GB-C41/ES/OXIDOS Y METALES BAJO CONDICIONES EXTREMAS: SINTESIS Y CARACTERIZACION DE MATERIALES EN VOLUMEN Y NANOCRISTALES CON APLICACIONES TECNOLOGICAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-106383GB-C42/ES/SESQUIOXIDOS Y COMPUESTOS METAVALENTES BAJO CONDICIONES EXTREMAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-127656NB-I00/ES/FOTOLUMINISCENCIA AMPLIFICADA POR PLASMONES SUPERFICALES EN NANOMATERIALES DOPADOS CON LANTANIDOS SINTONIZADA MEDIANTE ALTA PRESION/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/DST//SR%2FFST%2FPSI-215%2F2016/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//CIPROM%2F2021%2F075/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//MFA%2F2022%2F007/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//RED2018-102612-T//MALTA Consolider Team/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//PRTR-C17.I1/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/UoH//UoH-IoE-RC3-21-046/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Escuela Politécnica Superior de Alcoy - Escola Politècnica Superior d'Alcoi es_ES
dc.description.bibliographicCitation Errandonea, D.; Rodriguéz, F.; Vilaplana Cerda, RI.; Vie Giner, D.; Garg, S.; Nayak, B.; Garg, N.... (2023). Band-Gap Energy and Electronic d-d Transitions of NiWO4 Studied under High-Pressure Conditions. The Journal of Physical Chemistry C. 127:15630-15640. https://doi.org/10.1021/acs.jpcc.3c03512 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1021/acs.jpcc.3c03512 es_ES
dc.description.upvformatpinicio 15630 es_ES
dc.description.upvformatpfin 15640 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 127 es_ES
dc.identifier.pmid 37588813 es_ES
dc.identifier.pmcid PMC10426340 es_ES
dc.relation.pasarela S\506849 es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder University of Hyderabad es_ES
dc.contributor.funder Agencia Estatal de Investigación es_ES
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
dc.contributor.funder Department of Science and Technology, Ministry of Science and Technology, India es_ES


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