Slow-Light-Enhanced Silicon Optical Modulators Under Low-Drive-Voltage Operation
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| dc.contributor.author | Brimont, Antoine Christian Jacques
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es_ES |
| dc.contributor.author | Gutiérrez Campo, Ana María
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es_ES |
| dc.contributor.author | Aamer, Mariam
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es_ES |
| dc.contributor.author | Thomson, David J.
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es_ES |
| dc.contributor.author | Gardes, Frederic Y.
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es_ES |
| dc.contributor.author | Fedeli, Jean-Marc
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es_ES |
| dc.contributor.author | Reed, Graham T.
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es_ES |
| dc.contributor.author | Martí Sendra, Javier
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es_ES |
| dc.contributor.author | Sanchis Kilders, Pablo
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es_ES |
| dc.date.accessioned | 2014-06-11T18:03:36Z | |
| dc.date.available | 2014-06-11T18:03:36Z | |
| dc.date.issued | 2012-10 | |
| dc.identifier.issn | 1943-0655 | |
| dc.identifier.uri | http://hdl.handle.net/10251/38097 | |
| dc.description.abstract | [EN] The integration of nanophotonics components with advanced complementary metal-oxide-semiconductor (CMOS) electronics requires drive voltages as low as 1 V for enabling next-generation CMOS electrophotonics transceivers. Slow-light propagation has been recently demonstrated as an effective mechanism to enhance the modulation efficiency in free-carrier-based electrooptical silicon modulators. Here, we exploit the use of slow light to reduce the driving voltage of carrier-depletion-based Mach-Zehnder modulators. The slow-light phase shifter consists of a p-n junction positioned in the middle of a corrugated waveguide. A modulation efficiency as high as V pi L pi similar to 0: 6 V . cm is achieved, thus allowing data transmission rates up to 10 Gb/s with a 1.5-V-pp drive voltage and an insertion loss of similar to 12 dB. The influence of the drive voltage on the modulation speed as well as the variation of the insertion losses with a group index is also analyzed and discussed.© 2009-2012 IEEE. | es_ES |
| dc.description.sponsorship | Manuscript received April 24, 2012; revised June 29, 2012; accepted July 2, 2012. Date of current version July 25, 2012. This work was supported by the European Commission under Project HELIOS (photonics electronics functional integration on CMOS), FP7224312, and by the TEC2008-06333 SINADEC and PROMETEO-2010-087 R&D Excellency Program (NANOMET). The work of F. Y. Gardes, D. J. Thomson, and G. T. Reed was supported by the UK Environmental and Physical Sciences Research Council funding body under the grant "UK Silicon Photonics." [Corresponding author: P. Sanchis (e-mail: pabsanki@ntc.upv.es). | en_EN |
| dc.format.extent | 10 | es_ES |
| dc.language | Inglés | es_ES |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE): OAJ | es_ES |
| dc.relation.ispartof | IEEE Photonics Journal | es_ES |
| dc.rights | Reserva de todos los derechos | es_ES |
| dc.subject | Optical interconnects | es_ES |
| dc.subject | Photonic band-gap structures | es_ES |
| dc.subject | Silicon nanophotonics | es_ES |
| dc.subject | Slow light | es_ES |
| dc.subject | Complementary metal oxide semiconductors | es_ES |
| dc.subject | Corrugated waveguide | es_ES |
| dc.subject | Data transmission rates | es_ES |
| dc.subject | Mach Zehnder modulator | es_ES |
| dc.subject | Silicon modulators | es_ES |
| dc.subject | Data communication systems | es_ES |
| dc.subject | Light modulators | es_ES |
| dc.subject.classification | TEORIA DE LA SEÑAL Y COMUNICACIONES | es_ES |
| dc.title | Slow-Light-Enhanced Silicon Optical Modulators Under Low-Drive-Voltage Operation | es_ES |
| dc.type | Artículo | es_ES |
| dc.identifier.doi | 10.1109/JPHOT.2012.2207884 | |
| dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU/pHotonics ELectronics functional Integration on CMOS/ | |
| dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//TEC2008-06333/ES/DISPOSITIVOS NANOFOTONICOS EN SILICIO/ | es_ES |
| dc.relation.projectID | info:eu-repo/grantAgreement/GVA//PROMETEO%2F2010%2F087/ES/DESARROLLO DE NUEVOS DISPOSITIVOS NANOFOTONICOS BASADOS EN GUIAS DE SILICIO Y METAMATERIALES/ | es_ES |
| dc.rights.accessRights | Abierto | es_ES |
| dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica | es_ES |
| dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions | es_ES |
| dc.description.bibliographicCitation | Brimont, ACJ.; Gutiérrez Campo, AM.; Aamer, M.; Thomson, DJ.; Gardes, FY.; Fedeli, J.; Reed, GT.... (2012). Slow-Light-Enhanced Silicon Optical Modulators Under Low-Drive-Voltage Operation. IEEE Photonics Journal. 4(5):1306-1315. https://doi.org/10.1109/JPHOT.2012.2207884 | es_ES |
| dc.description.accrualMethod | S | es_ES |
| dc.relation.publisherversion | http://dx.doi.org/10.1109/JPHOT.2012.2207884 | es_ES |
| dc.description.upvformatpinicio | 1306 | es_ES |
| dc.description.upvformatpfin | 1315 | es_ES |
| dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
| dc.description.volume | 4 | es_ES |
| dc.description.issue | 5 | es_ES |
| dc.relation.senia | 229936 | |
| dc.contributor.funder | European Commission | |
| dc.contributor.funder | Ministerio de Ciencia e Innovación | |
| dc.contributor.funder | Generalitat Valenciana | |
| dc.contributor.funder | Engineering and Physical Sciences Research Council, Reino Unido | es_ES |
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