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Analytical model for calculating the nonlinear distortion in silicon-based electro-optic Mach-Zehnder modulators

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dc.contributor.author Gutiérrez Campo, Ana María es_ES
dc.contributor.author Brimont, Antoine Christian Jacques es_ES
dc.contributor.author Herrera Llorente, Javier es_ES
dc.contributor.author Aamer, Mariam es_ES
dc.contributor.author Thomson, Dave J. es_ES
dc.contributor.author Gardes, Frederic Y. es_ES
dc.contributor.author Reed, Graham T. es_ES
dc.contributor.author Fedeli, Jean-Marc es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.date.accessioned 2015-11-04T11:15:24Z
dc.date.available 2015-11-04T11:15:24Z
dc.date.issued 2013-12
dc.identifier.issn 0733-8724
dc.identifier.uri http://hdl.handle.net/10251/56987
dc.description.abstract [EN] In this study, an analytical model for calculating the nonlinear harmonic/intermodulation distortion for RF signals in silicon-based electro-optic modulators is investigated by considering the nonlinearity on the effective index change curve with the operation point and the device structure simultaneously. Distortion expressions are obtained and theoretical results are presented showing that optimal modulator parameters can be found to linearize it. Moreover, the harmonic distortion of a 1 mm silicon-based asymmetric MZI is RF characterized and used to corroborate the theoretical results. Based on the present model, the nonlinear distortion in terms of bias voltage or operating wavelength is calculated and validated by comparing with the experimental data, showing a good agreement between measurements and theory. Analog photonic link quality parameter like carrier-todistortion is one of the parameters that can be found with that model. Finally, the modulation depth is measured to assure that no over-modulation is produced. es_ES
dc.description.sponsorship This work was supported by the funding from the European Commission under project HELIOS (pHotonics Electronics functional Integration on CMOS), FP7-224312. The work of P. Sanchis and J.-M. Fedeli was supported by the funding funding from TEC2012-38540 LEOMIS, TEC2008-06333 SINADEC, and PROMETEO-2010-087. The work of F. Y. Gardes, D. J. Thomson and G. T. Reed was supported by funding received from the UK EPSRC funding body under the grant "UK Silicon Photonics." en_EN
dc.language Inglés es_ES
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) es_ES
dc.relation.ispartof Journal of Lightwave Technology es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Electrooptic modulation es_ES
dc.subject Integrated optics es_ES
dc.subject Nonlinear distortion es_ES
dc.subject Silicon on insulator technology es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Analytical model for calculating the nonlinear distortion in silicon-based electro-optic Mach-Zehnder modulators es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1109/JLT.2013.2286838
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/224312/EU/pHotonics ELectronics functional Integration on CMOS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2012-38540-C02-02/ES/DISPOSITIVOS DE CONMUTACION Y MODULACION ELECTRO-OPTICA CON FOTONICA DE SILICIO BASADA EN TECNOLOGIA CMOS PARA ENRUTADO INTRA-CHIP E INTERCONEXIONES OPTICAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//TEC2008-06333/ES/DISPOSITIVOS NANOFOTONICOS EN SILICIO/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEO%2F2010%2F087/ES/DESARROLLO DE NUEVOS DISPOSITIVOS NANOFOTONICOS BASADOS EN GUIAS DE SILICIO Y METAMATERIALES/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Gutiérrez Campo, AM.; Brimont, ACJ.; Herrera Llorente, J.; Aamer, M.; Thomson, DJ.; Gardes, FY.; Reed, GT.... (2013). Analytical model for calculating the nonlinear distortion in silicon-based electro-optic Mach-Zehnder modulators. Journal of Lightwave Technology. 31(23):3603-3612. https://doi.org/10.1109/JLT.2013.2286838 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1109/JLT.2013.2286838 es_ES
dc.description.upvformatpinicio 3603 es_ES
dc.description.upvformatpfin 3612 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 31 es_ES
dc.description.issue 23 es_ES
dc.relation.senia 255142 es_ES
dc.identifier.eissn 1558-2213
dc.contributor.funder European Commission
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder Generalitat Valenciana
dc.contributor.funder Ministerio de Economía y Competitividad es_ES


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