A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

Aamer, Mariam; Gutiérrez Campo, Ana María; Brimont, Antoine Christian Jacques; Vermeulen, Diedrik; Roelkens, Gunther; Fedeli, Jean-Marc; Håkansson, Ola Andreas; Sanchis Kilders, Pablo

doi:10.1109/LPT.2012.2218593

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A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

Título: A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

Autor: Aamer, Mariam; Gutiérrez Campo, Ana María; Brimont, Antoine Christian Jacques; Vermeulen, Diedrik; Roelkens, Gunther; Fedeli, Jean-Marc; Håkansson, Ola Andreas; Sanchis Kilders, Pablo

Resumen: [EN] A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25-mu m-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal-oxide-semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than -0.85 dB with insertion losses ranging from -1 to -2.5 dB over a wavelength range of 30 nm is demonstrated. © 1989-2012 IEEE

URI: http://hdl.handle.net/10251/38055

Fecha: 2012-11-15

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