A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section
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| dc.contributor.author | Aamer, Mariam
|
es_ES |
| dc.contributor.author | Gutiérrez Campo, Ana María
|
es_ES |
| dc.contributor.author | Brimont, Antoine Christian Jacques
|
es_ES |
| dc.contributor.author | Vermeulen, Diedrik
|
es_ES |
| dc.contributor.author | Roelkens, Gunther
|
es_ES |
| dc.contributor.author | Fedeli, Jean-Marc
|
es_ES |
| dc.contributor.author | Håkansson, Ola Andreas
|
es_ES |
| dc.contributor.author | Sanchis Kilders, Pablo
|
es_ES |
| dc.date.accessioned | 2014-06-10T15:19:09Z | |
| dc.date.issued | 2012-11-15 | |
| dc.identifier.issn | 1041-1135 | |
| dc.identifier.uri | http://hdl.handle.net/10251/38055 | |
| dc.description.abstract | [EN] A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25-mu m-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal-oxide-semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than -0.85 dB with insertion losses ranging from -1 to -2.5 dB over a wavelength range of 30 nm is demonstrated. © 1989-2012 IEEE | es_ES |
| dc.description.sponsorship | This work was supported by the European Commission under Project HELIOS (pHotonics Electronics functional Integration on CMOS), FP7-224312, TEC2008-06333 SINADEC and PROMETEO-2010-087 R&D Excellency Program (NANOMET). | en_EN |
| dc.format.extent | 4 | es_ES |
| dc.language | Inglés | es_ES |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | es_ES |
| dc.relation.ispartof | IEEE Photonics Technology Letters | es_ES |
| dc.rights | Reserva de todos los derechos | es_ES |
| dc.subject | Integrated optics | es_ES |
| dc.subject | Polarization rotator | es_ES |
| dc.subject | Silicon-on-insulator (SOI) | es_ES |
| dc.subject | CMOS Compatible | es_ES |
| dc.subject | Compatible process | es_ES |
| dc.subject | Complementary metal oxide semiconductors | es_ES |
| dc.subject | Deep ultraviolet lithography | es_ES |
| dc.subject | Grating couplers | es_ES |
| dc.subject | Polarization conversion | es_ES |
| dc.subject | Silicon on insulator | es_ES |
| dc.subject | Silicon-on-insulators | es_ES |
| dc.subject | Siliconon-insulator technology (SOI) | es_ES |
| dc.subject | Symmetry-breaking | es_ES |
| dc.subject | Waveguide cross section | es_ES |
| dc.subject | Wavelength ranges | es_ES |
| dc.subject | Circular waveguides | es_ES |
| dc.subject | Conversion efficiency | es_ES |
| dc.subject | Automobile manufacture | es_ES |
| dc.subject.classification | TEORIA DE LA SEÑAL Y COMUNICACIONES | es_ES |
| dc.title | A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section | es_ES |
| dc.type | Artículo | es_ES |
| dc.embargo.lift | 10000-01-01 | |
| dc.embargo.terms | forever | es_ES |
| dc.identifier.doi | 10.1109/LPT.2012.2218593 | |
| dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU/pHotonics ELectronics functional Integration on CMOS/ | es_ES |
| dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//TEC2008-06333/ES/DISPOSITIVOS NANOFOTONICOS EN SILICIO/ | es_ES |
| dc.relation.projectID | info:eu-repo/grantAgreement/GVA//PROMETEO%2F2010%2F087/ES/DESARROLLO DE NUEVOS DISPOSITIVOS NANOFOTONICOS BASADOS EN GUIAS DE SILICIO Y METAMATERIALES/ | |
| dc.rights.accessRights | Abierto | es_ES |
| dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica | es_ES |
| dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions | es_ES |
| dc.description.bibliographicCitation | Aamer, M.; Gutiérrez Campo, AM.; Brimont, ACJ.; Vermeulen, D.; Roelkens, G.; Fedeli, J.; Håkansson, OA.... (2012). A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters. 24(22):2031-2034. https://doi.org/10.1109/LPT.2012.2218593 | es_ES |
| dc.description.accrualMethod | S | es_ES |
| dc.relation.publisherversion | http://dx.doi.org/10.1109/LPT.2012.2218593 | es_ES |
| dc.description.upvformatpinicio | 2031 | es_ES |
| dc.description.upvformatpfin | 2034 | es_ES |
| dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
| dc.description.volume | 24 | es_ES |
| dc.description.issue | 22 | es_ES |
| dc.relation.senia | 230601 | |
| dc.contributor.funder | European Commission | |
| dc.contributor.funder | Ministerio de Ciencia e Innovación | |
| dc.contributor.funder | Generalitat Valenciana |
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